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| GFB50N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Output Characteristics 80 VGS=10V 6.0V 4.0V 5.0V 4.5V 60 VDS = 10V 50 Fig. 2 - Transfer Characteristics ID -- Drain Source Current (A) ID -- Drain Current (A) 60 40 30 TJ = 125C --55C 10 0 25C 40 3.5V 20 20 3.0V 2.5V 0 0 1 2 3 4 5 1 2 3 4 5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 - Threshold Voltage vs. Temperature 1.8 ID = 250A 0.03 0.025 0.02 Fig. 4 - On-Resistance vs. Drain Current VGS(th) -- Threshold Voltage (V) 1.4 1.2 RDS(ON) -- On-Resistance () 1.6 VGS = 4.5V 5V 0.015 10V 0.01 0.005 0 1 0.8 0.6 --50 --25 0 25 50 75 100 125 150 0 20 40 60 80 100 TJ -- Junction Temperature (C) ID -- Drain Current (A) Fig. 5 - On-Resistance vs. Junction Temperature 1.6 VGS = 10V ID = 25A RDS(ON) -- On-Resistance (Normalized) 1.4 1.2 1 0.8 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (C) GFB50N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 6 - On-Resistance vs. Gate-to-Source Voltage 0.04 10 ID = 25A Fig. 7 - Gate Charge VGS -- Gate-to-Source Voltage (V) VDS = 15V ID = 15A 8 0.035 RDS(ON) -- On-Resistance () 0.03 0.025 0.02 0.015 0.01 0.005 0 2 4 6 8 10 25C TJ = 125C 6 4 2 0 0 10 20 30 35 VGS -- Gate-to-Source Voltage (V) Qg -- Charge (nC) Fig. 8 - Capacitance 2500 f = 1MHZ VGS = 0V 2000 Ciss 1500 100 Fig. 9 - Source-Drain Diode Forward Voltage VGS = 0V IS -- Source Current (A) C -- Capacitance (pF) 10 1 TJ = 125C 25C --55C 1000 500 0.1 Coss Crss 0 5 10 15 20 25 30 0.01 0 0.2 0.4 0.6 0.8 1 1.2 0 VDS -- Drain-to-Source Voltage (V) VSD -- Source-to-Drain Voltage (V) GFB50N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 10 - Breakdown Voltage vs. Junction Temperature 44 1 Fig. 11 - Transient Thermal Impedance RJA(norm) -- Normalized Thermal Impedance BVDSS -- Breakdown Voltage (V) 43 42 41 40 39 38 37 36 --50 ID = 250A 0.1 1. Duty Cycle, D = t1/t2 2. RJA(t) = RJA(norm) *RJA 3. RJA = 2.0C/W 4. TJ -- TA = PDM* RJA(t) 0.01 0.0001 0.001 0.01 0.1 1 10 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (C) Pulse Duration (sec.) Fig. 12 - Power vs. Pulse Duration 1000 Single Pulse RJA = 2.0C/W TC = 25C 1000 Fig. 13 - Maximum Safe Operating Area 800 ID -- Drain Current (A) 100 1m 10 m 10 Power (W) 600 0 s s 400 10 RDS(ON) Limit 100ms VGS = 10V Single Pulse RJC = 2.0C/W TA = 25C DC s 200 0 0.0001 0.001 0.01 0.1 1 10 1 0.1 1 10 100 Pulse Duration (sec.) VDS -- Drain-Source Voltage (V) |
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